Structural disorder-induced topological phase transitions in quasicrystals

Tan Peng, Yong-Chen Xiong, Chun-Bo Hua, Zheng-Rong Liu, Xiaolu Zhu, Wei Cao, Fang Lv, Yue Hou, Bin Zhou, Ziyu Wang, and Rui Xiong
Phys. Rev. B 109, 195301 – Published 14 May 2024

Abstract

Recently, structural disorder-induced topological phase transitions in periodic systems have attracted much attention. However, in aperiodic systems such as quasicrystalline systems, the interplay between structural disorder and band topology is still unclear. In this work, we investigate the effects of structural disorder on a quantum spin Hall insulator phase and a higher-order topological phase in a two-dimensional Amman-Beenker tiling quasicrystalline lattice. We demonstrate that the structural disorder can induce a topological phase transition from a quasicrystalline normal insulator phase to an amorphous quantum spin Hall insulator phase, which is confirmed by bulk gap closing and reopening, robust edge states, a quantized spin Bott index, and conductance. Furthermore, the structural disorder-induced higher-order topological phase transition from a quasicrystalline normal insulator phase to an amorphous higher-order topological phase characterized by a quantized quadrupole moment and topological corner states is also found. More strikingly, the disorder-induced higher-order topological insulator with eight corner states represents a distinctive topological state that eludes realization in conventional crystalline systems. Our work extends the study of the interplay between disorder effects and topologies to quasicrystalline and amorphous systems.

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  • Received 31 December 2023
  • Revised 28 April 2024
  • Accepted 2 May 2024

DOI:https://doi.org/10.1103/PhysRevB.109.195301

©2024 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Tan Peng1,2,*, Yong-Chen Xiong2,*, Chun-Bo Hua3, Zheng-Rong Liu4, Xiaolu Zhu1, Wei Cao1,5, Fang Lv1, Yue Hou5, Bin Zhou4,6,†, Ziyu Wang1,5,‡, and Rui Xiong1,§

  • 1Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
  • 2Hubei Key Laboratory of Energy Storage and Power Battery and School of Mathematics, Physics and Optoelectronic Engineering, Hubei University of Automotive Technology, Shiyan 442002, China
  • 3School of Electronic and Information Engineering, Hubei University of Science and Technology, Xianning 437100, China
  • 4Department of Physics, Hubei University, Wuhan 430062, China
  • 5The Institute of Technological Science, Wuhan University, Wuhan 430072, China
  • 6Key Laboratory of Intelligent Sensing System and Security of Ministry of Education, Hubei University, Wuhan 430062, China

  • *These authors contributed equally to this work.
  • binzhou@hubu.edu.cn
  • zywang@whu.edu.cn
  • §xiongrui@whu.edu.cn

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Vol. 109, Iss. 19 — 15 May 2024

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