Owing to their uniformity across large areas, low-temperature processability, and low off-current characteristics, oxide semiconductors demonstrate significant potential for integration into displays, memories, and logic devices. In the hyper scaling era, atomic layer deposition (ALD) is well suited for downsizing device fabrication, leveraging self-limiting chemical reactions to provide nanoscale control, and conformal coating on substrates with high aspect ratios. Hence, in this study, we fabricated highly oriented c-axis-aligned crystalline (CAAC) indium-gallium-zinc oxide (IGZO) thin films using plasma-enhanced ALD (PEALD), introducing an additional thermodynamic driving force for crystallization. A comparative study was conducted on the properties of CAAC-IGZO in correspondence to conventional sputter-based IGZO. In particular, photo-induced current transient spectroscopy (PICTS) is employed to map the electronic structure (density of states (DOS)) of the films, which quantitatively confirmed fewer defects in CAAC-IGZO. Fewer defects result in highly stable CAAC-IGZO transistors with positive bias stress threshold (PBTS) at 0.03 V and negative bias stress threshold (NBTS) at 0.06 V. Thus, this research on thermally and electrically stable CAAC-IGZO synthesized at low temperatures through PEALD offers insights into the processing and material perspectives for the application of oxide semiconductors in 3D integration.

中文翻译：

---

使用原子层沉积合成的密排 InGaZnO 中缺陷数量减少


由于其大面积的均匀性、低温可加工性和低截止电流特性，氧化物半导体表现出集成到显示器、存储器和逻辑器件中的巨大潜力。在超尺度时代，原子层沉积 (ALD) 非常适合缩小器件制造尺寸，利用自限性化学反应提供纳米级控制，以及在高深宽比基材上进行保形涂层。因此，在这项研究中，我们使用等离子体增强 ALD (PEALD) 制造了高度取向的 c 轴排列晶体 (CAAC) 氧化铟镓锌 (IGZO) 薄膜，为结晶引入了额外的热力学驱动力。对 CAAC-IGZO 与传统溅射 IGZO 的性能进行了比较研究。特别是，采用光致电流瞬态光谱（PICTS）来绘制薄膜的电子结构（态密度（DOS）），这定量地证实了 CAAC-IGZO 中的缺陷较少。更少的缺陷导致高度稳定的 CAAC-IGZO 晶体管，其正偏压应力阈值 (PBTS) 为 0.03 V，负偏压应力阈值 (NBTS) 为 0.06 V。因此，这项研究在低温下合成了热稳定和电稳定的 CAAC-IGZO，通过PEALD 提供了有关氧化物半导体在 3D 集成中应用的加工和材料观点的见解。