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Gate-Controlled Anyon Generation and Detection in Kitaev Spin Liquids
Physical Review Letters ( IF 8.6 ) Pub Date : 2024-05-15 , DOI: 10.1103/physrevlett.132.206501
Gábor B. Halász 1
Affiliation  

Reliable manipulation of non-Abelian Ising anyons supported by Kitaev spin liquids may enable intrinsically fault-tolerant quantum computation. Here, we introduce a standalone scheme for both generating and detecting individual Ising anyons using tunable gate voltages in a heterostructure containing a non-Abelian Kitaev spin liquid and a monolayer semiconductor. The key ingredients of our setup are a Kondo coupling to stabilize an Ising anyon in the spin liquid around each electron in the semiconductor, and a large charging energy to allow control over the electron numbers in distinct gate-defined regions of the semiconductor. In particular, a single Ising anyon can be generated at a disk-shaped region by gate tuning its electron number to one, while it can be interferometrically detected by measuring the electrical conductance of a ring-shaped region around it whose electron number is allowed to fluctuate between zero and one. We provide concrete experimental guidelines for implementing our proposal in promising candidate materials like αRuCl3.

中文翻译:

Kitaev 自旋液体中的门控任意子生成和检测

由基塔耶夫自旋液体支持的非阿贝尔伊辛任意子的可靠操纵可以实现本质上容错的量子计算。在这里,我们介绍了一种独立的方案,用于在包含非阿贝尔基塔耶夫自旋液体和单层半导体的异质结构中使用可调栅极电压来生成和检测单个伊辛任意子。我们设置的关键要素是近藤耦合,用于稳定半导体中每个电子周围自旋液体中的伊辛任意子,以及大的充电能量,以允许控制半导体不同栅极定义区域中的电子数量。特别是,通过门将其电子数调整为 1,可以在盘形区域生成单个伊辛任意子,同时可以通过测量其周围的环形区域的电导来干涉检测该任意子,该环形区域的电子数允许为 1。在零和一之间波动。我们提供了具体的实验指南,用于在有希望的候选材料中实施我们的建议,例如α-氯化钌3
更新日期:2024-05-16
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