Magneto-ionic gating, a procedure that enables the modulation of materials' magnetic properties by voltage-driven ion motion, offers alternative perspectives for emerging low-power magnetic storage and spintronic applications. Most previous studies in all-solid-state magneto-ionic systems have focused on the control of interfacial magnetism of ultrathin (i.e., 1–3 nm) magnetic films, taking advantage of an adjacent ionic conducting oxide, usually GdOx or HfOx, that transports functional ionic species (e.g., H+ or O2−). Here, we report on room-temperature OFF–ON ferromagnetism by solid-state magneto-ionics in relatively thick (25 nm) patterned CoOx films grown on an yttria-stabilized zirconia (YSZ) layer, which acts as a dielectric to hold electric field and as an O2− ion reservoir. Upon negatively biasing, O2− ions from the CoOx tend to migrate toward the YSZ gate electrode, leading to the gradual generation of magnetization (i.e., OFF-to-ON switching of a ferromagnetic state). X-ray absorption and magnetic circular dichroism studies reveal subtle changes in the electronic/chemical characteristics, responsible for the induced magnetoelectric effects in such all-oxide heterostructures. Recovery of the initial (virtually non-magnetic) state is achieved by application of a positive voltage. The study may guide future development of all-solid-state low-power CMOS-compatible magneto-ionic devices.

中文翻译：

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全固态 CoOx/氧化钇稳定氧化锆异质结构中磁性的离子控制


磁离子门控是一种通过电压驱动离子运动来调节材料磁性能的过程，为新兴的低功耗磁存储和自旋电子应用提供了替代视角。之前大多数全固态磁离子系统的研究都集中在超薄（即 1-3 nm）磁性薄膜的界面磁性控制上，利用相邻的离子导电氧化物（通常是 GdOx 或 HfOx）来传输功能性离子种类（例如，H+ 或 O2−）。在这里，我们报告了在氧化钇稳定氧化锆（YSZ）层上生长的相对较厚（25 nm）图案化CoOx薄膜中通过固态磁离子学实现的室温OFF-ON铁磁性，该薄膜充当保持电场的电介质并作为 O2− 离子库。在负偏压下，CoOx 中的 O2− 离子倾向于向 YSZ 栅电极迁移，导致磁化强度的逐渐产生（即铁磁状态从 OFF 到 ON 的切换）。 X射线吸收和磁圆二色性研究揭示了电子/化学特性的微妙变化，这是这种全氧化物异质结构中感应磁电效应的原因。初始（几乎非磁性）状态的恢复是通过施加正电压来实现的。该研究可能会指导全固态低功耗 CMOS 兼容磁离子器件的未来发展。