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Bridging the buried interface with conjugated molecule for highly efficient carbon-based inorganic CsPbI2Br perovskite solar cells fabricated in air
Chemical Engineering Journal ( IF 15.1 ) Pub Date : 2024-05-13 , DOI: 10.1016/j.cej.2024.152210
Yifei Shi , Lei Zhang , Shuming Hu , Xu Wang , Jiajia Han , Jincheng Huang , Junjie Chen , Yuanfang Zhang , Xinlong Zhang , Jintao He , Hengzhi Zuo , Jiayao Ju , Zihan Wu , Wei Zhao , Yuxi Zeng , Yu Zou , Kai Liao , Ruoxi Yang , Wenxia Ye , Yongjie Gu , Li Gong , Shaosheng Fan , Zhuoyin Peng , Jianlin Chen

Manipulating the buried interface of all-inorganic perovskite solar cells (PSCs) is essential to improve the performance of devices. However, the conventional modifiers of interface typically present insulating feature that can impede the transportation of carrier, leading to an inferior charge transport efficiency. Herein, we propose a conjugated molecule, 2,4-hexadienoic acid potassium salt, which can act as a bridge at the buried interface of device and improve the crystallization of perovskite film. Besides, this interfacial modifier also promotes larger and denser grains, passivating defects and suppress non-radiative recombination of buried interface. Simultaneously, the electrical performance of tin oxide film is enhanced and facilitate a better energy level alignment. Consequently, carbon electrodes-based PSCs (C-PSCs) are fabricated via a hot air-assisted method in air, and C-PSCs based on all-inorganic perovskite demonstrate significant enhancement of open circuit voltage (1.25 V) via conjugated molecule modification, and the power conversion efficiency (PCE) increase significantly from 10.86 % to 13.11 %. Moreover, unencapsulated target devices exhibit better stability than the control devices. This work offers a new idea to construct an interfacial bridge via conjugated molecule for efficient and stable C-PSCs fabricated in air.

中文翻译:


用共轭分子桥接掩埋界面,用于空气中制造的高效碳基无机 CsPbI2Br 钙钛矿太阳能电池



操纵全无机钙钛矿太阳能电池(PSC)的埋入界面对于提高器件的性能至关重要。然而,传统的界面改性剂通常具有绝缘特性,会阻碍载流子的传输,导致电荷传输效率较差。在此,我们提出了一种共轭分子2,4-己二烯酸钾盐,它可以充当器件埋入界面的桥梁并改善钙钛矿薄膜的结晶。此外,这种界面改性剂还促进晶粒更大、更致密,钝化缺陷并抑制埋入界面的非辐射复合。同时,氧化锡薄膜的电性能得到增强,有利于更好的能级排列。因此,基于碳电极的PSC(C-PSC)是通过空气中的热空气辅助方法制造的,并且基于全无机钙钛矿的C-PSC通过共轭分子修饰表现出开路电压(1.25V)的显着增强,功率转换效率(PCE)从 10.86% 大幅提升至 13.11%。此外,未封装的目标器件表现出比控制器件更好的稳定性。这项工作为在空气中制备高效稳定的C-PSCs提供了通过共轭分子构建界面桥的新思路。
更新日期:2024-05-13
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