Considerable attention has been drawn to the use of volatile two-terminal devices relying on the Mott transition for the stochastic generation of probabilistic bits (p-bits) in emerging probabilistic computing. To improve randomness and endurance of bit streams provided by these devices, delicate control of the transient evolution of switchable domains is required to enhance stochastic p-bit generation. Herein, it is demonstrated that the randomness of p-bit streams generated via the consecutive pulse inputs of pump–probe protocols can be increased by the deliberate incorporation of metal nanoparticles (NPs), which influence the transient dynamics of the nanoscale metallic phase in VO₂ Mott switches. Among the vertically stacked Pt-NP-containing VO₂ threshold switches, those with higher Pt NP density show a considerably wider range of p-bit operation (e.g., up to ≈300% increase in ΔV_probe upon going from (Pt NP/VO₂)₀ to (Pt NP/VO₂)₁₁) and can therefore be operated under the conditions of high speed (400 kbit s⁻¹), low power consumption (14 nJ per bit), and high stability (>105 200 bits) for p-bit generation. Thus, the study presents a novel strategy that exploits nanoscale phase control to maximize the generation of nondeterministic information sources for energy-efficient probabilistic computing hardware.

中文翻译：

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通过嵌入金属纳米粒子促进莫特器件中的概率位生成


在新兴的概率计算中，使用依赖于莫特变换随机生成概率位（p 位）的易失性两端设备已引起了相当多的关注。为了提高这些设备提供的比特流的随机性和耐久性，需要对可切换域的瞬态演化进行精细控制，以增强随机 p 位生成。本文证明，通过泵浦-探测协议的连续脉冲输入生成的p位流的随机性可以通过故意掺入金属纳米粒子（NP）来增加，这会影响VO中纳米级金属相的瞬态动力学 ₂ 莫特开关。在垂直堆叠的含 Pt-NP 的 VO ₂ 阈值开关中，具有较高 Pt NP 密度的开关表现出相当广泛的 p 位操作范围（例如，ΔV _probe 从 (Pt NP/VO ₂ ) ₀ 到 (Pt NP/VO ₂ ) ₁₁ ) 并且因此，可以在高速（400 kbit s ⁻¹ ）、低功耗（每比特 14 nJ）和高稳定性（>105 200 位）的条件下运行 p 位生成。因此，该研究提出了一种新颖的策略，利用纳米级相位控制来最大限度地为节能概率计算硬件生成非确定性信息源。