The quest for realizing highly spin-polarized conduction in materials at room temperature is one of the central themes of materials physics. We report on the realization of a conducting interface in $\mathrm{LaFe}{\mathrm{O}}_3$ (LFO)-$\mathrm{SrTi}{\mathrm{O}}_3$ (STO) that demonstrates spin-polarization signatures, namely, negative magnetoresistance (MR) and anomalous Hall resistivity $>150$ K and even up to room temperature. However, the same system shows positive MR and normal Hall effect at temperatures $<150$ K. From density functional theory calculations, we find that this is related to the structural transition of the substrate, amplified here as the changes happen at the interface. This leads to a net spin polarization of the interface states at the Fermi energy in the high-temperature phase, allowing for an anomalous Hall effect and negative MR. In addition, this interface appears to be almost transparent in the entire range of visible light. Our observation might be viewed as a step toward room-temperature transparent oxide spintronics.

中文翻译：

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室温透明氧化物自旋电子学：LaFeO3−SrTiO3 中的导电界面

寻求在室温下实现材料的高度自旋极化传导是材料物理学的中心主题之一。我们报告了传导接口的实现$\mathrm{拉铁}{\mathrm{氧}}_3$（低频振荡器）-$\mathrm{钛锶}{\mathrm{氧}}_3$（STO），展示自旋极化特征，即负磁阻（MR）和反常霍尔电阻率$>150$K 甚至达到室温。然而，同一系统在一定温度下表现出正磁阻效应和正常霍尔效应$<150$K. 从密度泛函理论计算中，我们发现这与基底的结构转变有关，随着界面处发生的变化而放大。这导致高温阶段费米能级界面态的净自旋极化，从而产生反常霍尔效应和负磁阻。此外，该界面在整个可见光范围内看起来几乎是透明的。我们的观察可能被视为迈向室温透明氧化物自旋电子学的一步。