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TiO2 Electron Transport Layer with p–n Homojunctions for Efficient and Stable Perovskite Solar Cells
Nano-Micro Letters ( IF 26.6 ) Pub Date : 2024-05-03 , DOI: 10.1007/s40820-024-01407-3 Wenhao Zhao , Pengfei Guo , Jiahao Wu , Deyou Lin , Ning Jia , Zhiyu Fang , Chong Liu , Qian Ye , Jijun Zou , Yuanyuan Zhou , Hongqiang Wang
中文翻译:
具有 p-n 同质结的 TiO2 电子传输层,用于高效稳定的钙钛矿太阳能电池
更新日期:2024-05-08
Nano-Micro Letters ( IF 26.6 ) Pub Date : 2024-05-03 , DOI: 10.1007/s40820-024-01407-3 Wenhao Zhao , Pengfei Guo , Jiahao Wu , Deyou Lin , Ning Jia , Zhiyu Fang , Chong Liu , Qian Ye , Jijun Zou , Yuanyuan Zhou , Hongqiang Wang
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Developing a universal strategy of the p–n homojunction engineering that could significantly boost electron mobility of electron transport layer (ETL) by two orders of magnitude.
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Proposing a new mechanism based on p–n homojunction to explain inhibited carrier loss at buried interface.
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Setting a new performance benchmark as high as 25.50% for planar perovskite solar cells employing TiO2 as ETLs.
中文翻译:
具有 p-n 同质结的 TiO2 电子传输层,用于高效稳定的钙钛矿太阳能电池
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开发 p-n 同质结工程的通用策略,可以将电子传输层 (ETL) 的电子迁移率显着提高两个数量级。
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提出一种基于 p-n 同质结的新机制来解释埋入界面处的抑制载流子损失。
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为采用 TiO 2作为 ETL 的平面钙钛矿太阳能电池设定了高达 25.50% 的新性能基准。