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Giant electron-mediated phononic nonlinearity in semiconductor–piezoelectric heterostructures
Nature Materials ( IF 41.2 ) Pub Date : 2024-05-03 , DOI: 10.1038/s41563-024-01882-4
Lisa Hackett , Matthew Koppa , Brandon Smith , Michael Miller , Steven Santillan , Scott Weatherred , Shawn Arterburn , Thomas A. Friedmann , Nils Otterstrom , Matt Eichenfield

Efficient and deterministic nonlinear phononic interactions could revolutionize classical and quantum information processing at radio frequencies in much the same way that nonlinear photonic interactions have at optical frequencies. Here we show that in the important class of phononic materials that are piezoelectric, deterministic nonlinear phononic interactions can be enhanced by orders of magnitude via the heterogeneous integration of high-mobility semiconductor materials. To this end, a lithium niobate and indium gallium arsenide heterostructure is utilized to produce the most efficient three- and four-wave phononic mixing to date, to the best of our knowledge. We then show that the conversion efficiency can be further enhanced by applying semiconductor bias fields that amplify the phonons. We present a theoretical model that accurately predicts the three-wave mixing efficiencies in this work and extrapolate that these nonlinearities can be enhanced far beyond what is demonstrated here by confining phonons to smaller dimensions in waveguides and optimizing the semiconductor material properties.



中文翻译:

半导体压电异质结构中的巨电子介导声子非线性

高效且确定性的非线性声子相互作用可以彻底改变射频下的经典和量子信息处理,就像非线性光子相互作用在光频率下的作用一样。在这里,我们表明,在重要的压电声子材料中,通过高迁移率半导体材料的异质集成可以将确定性非线性声子相互作用增强几个数量级。为此,据我们所知,利用铌酸锂和砷化铟镓异质结构来产生迄今为止最有效的三波和四波声子混合。然后我们表明,通过应用放大声子的半导体偏置场可以进一步提高转换效率。我们提出了一个理论模型,可以准确预测这项工作中的三波混频效率,并推断通过将声子限制在波导中较小的尺寸并优化半导体材料特性,这些非线性可以得到增强,远远超出此处所演示的范围。

更新日期:2024-05-03
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