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Recovery of Quasi-Permanent Bias Temperature Instability in SiC MOSFETs and Its Physical Mechanism
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 5.5 ) Pub Date : 2024-04-29 , DOI: 10.1109/jestpe.2024.3394476 Kaiwei Li 1 , Pengju Sun 1 , Zhiyuan He 2 , Xu Huang 1 , Qiang Li 1 , Lan Chen 1 , Quanming Luo 1 , Xiong Du 1
中文翻译：
SiC MOSFET准永久偏置温度不稳定性的恢复及其物理机制
更新日期：2024-04-29
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 5.5 ) Pub Date : 2024-04-29 , DOI: 10.1109/jestpe.2024.3394476 Kaiwei Li 1 , Pengju Sun 1 , Zhiyuan He 2 , Xu Huang 1 , Qiang Li 1 , Lan Chen 1 , Quanming Luo 1 , Xiong Du 1
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中文翻译：
SiC MOSFET准永久偏置温度不稳定性的恢复及其物理机制
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