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Double-Sided Cooling Half-Bridge Power Module of 650 V/150 A Gallium Nitride High-Electron-Mobility Transistor
IEEE Transactions on Industrial Electronics ( IF 7.7 ) Pub Date : 2024-04-29 , DOI: 10.1109/tie.2024.3383021 Shengchang Lu 1 , Bo Li 1 , Emmanuel Arriola 2 , Zichen Zhang 1 , Carl Nicholas 1 , Khai D. T. Ngo 1 , Guo-Quan Lu 1
中文翻译：
650V/150A氮化镓高电子迁移率晶体管双面冷却半桥功率模块
更新日期：2024-04-29
IEEE Transactions on Industrial Electronics ( IF 7.7 ) Pub Date : 2024-04-29 , DOI: 10.1109/tie.2024.3383021 Shengchang Lu 1 , Bo Li 1 , Emmanuel Arriola 2 , Zichen Zhang 1 , Carl Nicholas 1 , Khai D. T. Ngo 1 , Guo-Quan Lu 1
Affiliation
中文翻译：
650V/150A氮化镓高电子迁移率晶体管双面冷却半桥功率模块
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