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Full‐Space Near‐ and Far‐Field Jones Vector Reconstruction by Global Organization of Bidirectional Non‐Interleaved Linear‐Polarized Meta‐Radiators
Laser & Photonics Reviews ( IF 11.0 ) Pub Date : 2024-04-26 , DOI: 10.1002/lpor.202400079
Cheng Pang 1 , Yuzhong Wang 1 , Axiang Yu 1 , Jiaran Qi 1
Affiliation  

Integrated radiation‐type metasurfaces (RA‐M) have gained importance in the development of next‐generation wireless communications and integrated electronics. They facilitate advanced electromagnetic (EM) wave control with a single radiation aperture. However, most RA‐Ms fail to simultaneously decouple the amplitude, phase, and polarization information of the spatial radiation wavefront owing to the intrinsic restrictions of the meta‐radiator and limited design strategy. This study proposes and demonstrates a full‐space non‐interleaved RA‐M platform capable of precise complex‐vector‐field (CVF) Jones vector reconstruction of both near and far fields in the microwave region. The method is based on the global interaction of linear‐polarized (LP) meta‐radiators, which are organized via the LP‐basis inverse design methodology; thus, the near‐ and far‐field Jones vectors of the radiated wavefront can be subjected to customized reconstruction. The existing unidirectional meta‐radiators are further pushed to bidirectional spaces, facilitating diverse full‐space multiplexing integrated meta‐devices, such as bidirectional multi‐polarization routers and full‐space vectorial hologram modulators. The proposed RA‐M unlocks the unequaled potential of radiated CVF, thereby paving a promising pathway for integrated electronic device technologies.

中文翻译:

全球双向非交错线性偏振元辐射器组织的全空间近场和远场琼斯矢量重建

集成辐射型超表面(RA-M)在下一代无线通信和集成电子学的发展中变得越来越重要。它们通过单个辐射孔径促进先进的电磁 (EM) 波控制。然而,由于元辐射器的内在限制和有限的设计策略,大多数 RA-M 无法同时解耦空间辐射波前的幅度、相位和偏振信息。本研究提出并演示了一种全空间非交错 RA-M 平台,能够对微波区域的近场和远场进行精确的复矢量场 (CVF) 琼斯矢量重建。该方法基于线性极化(LP)元辐射器的全局相互作用,这些元辐射器通过基于LP的逆向设计方法进行组织;因此,辐射波前的近场和远场琼斯矢量可以进行定制重建。现有的单向元辐射器被进一步推向双向空间,促进各种全空间复用集成元设备,例如双向多极化路由器和全空间矢量全息调制器。所提出的 RA-M 释放了辐射 CVF 无与伦比的潜力,从而为集成电子设备技术铺平了一条充满希望的道路。
更新日期:2024-04-26
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