Accurate on-chip temperature sensing is critical for the optimal performance of modern complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has stimulated much interest in ICs operating at deep cryogenic temperatures (typically 0.01–4 K), in which the reduced thermal conductivity of silicon and silicon oxide and the limited cooling power budgets make local on-chip temperature sensing even more important. Here, we report four different methods for on-chip temperature measurements native to CMOS industrial fabrication processes. These include secondary and primary thermometry methods and cover conventional thermometry structures used at room temperature as well as methods exploiting phenomena that emerge at cryogenic temperatures, such as superconductivity and Coulomb blockade. We benchmark the sensitivity of the methods as a function of temperature and use them to measure local excess temperature produced by on-chip heating elements. Our results demonstrate thermometry methods that may be readily integrated in CMOS chips with operation from the millikelvin range to room temperature.

中文翻译：

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深低温下的 CMOS 片上测温

准确的片上温度传感对于现代互补金属氧化物半导体 (CMOS) 集成电路 (IC) 的最佳性能至关重要，以了解和监控工作期间芯片周围的局部发热情况。量子计算机的发展激发了人们对在深低温（通常为 0.01–4 K）下运行的 IC 的极大兴趣，其中硅和氧化硅的导热系数降低以及有限的冷却功率预算使得本地片上温度传感更加重要重要的。在这里，我们报告了 CMOS 工业制造工艺中原生的四种不同的片上温度测量方法。这些包括次级和初级测温方法，涵盖室温下使用的传统测温结构以及利用低温下出现的现象（例如超导性和库仑阻塞）的方法。我们将这些方法的灵敏度作为温度的函数进行基准测试，并使用它们来测量片上加热元件产生的局部过高温度。我们的结果表明，测温方法可以很容易地集成到 CMOS 芯片中，并在毫开尔文范围到室温范围内运行。