High entropy engineering has emerged as a new strategy to improve the energy storage density and efficiency of dielectric capacitors due to its unique design concept. However, the recyclable energy storage density () reported so far has never exceeded 2 J/cm for the type of high-entropy ceramics with equimolar elements occupying A or B site. In order to improve this type high-entropy ceramics. NaBiTiO (NBT) was used as the matrix, equimolar Sr, La, K and Ba were gradually introduced into at the A-site of the matrix lattice to increase configurational entropy. The results show that the relaxor degree, band gap width, interfacial polarization, and breakdown field strength are effectively improved with increasing entropy. Among them, suppressing interfacial polarization is an important factor to increase the breakdown field strength and thus enhance the energy storage performance. The (NaBiSrLaKBa)TiO (NBSLKBT) sample with the highest configurational entropy shows an ultra-high of 9.8 J/cm and the energy storage efficiency ( = 86.5%). This work demonstrates that entropy strategy for superior energy-storage performance still works on the above type high-entropy ceramics and opens up a new way of modulating interface polarization by entropy increase strategy.

中文翻译：

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通过熵增策略抑制界面极化，实现Na0.5Bi0.5TiO3基陶瓷的优异储能性能


高熵工程因其独特的设计理念而成为提高介质电容器储能密度和效率的新策略。然而，迄今为止报道的等摩尔元素占据A位或B位的高熵陶瓷类型的可回收储能密度（）从未超过2J/cm。为了改进这种类型的高熵陶瓷。以NaBiTiO（NBT）为基体，在基体晶格的A位逐渐引入等摩尔的Sr、La、K和Ba以增加构型熵。结果表明，随着熵的增加，弛豫度、带隙宽度、界面极化和击穿场强得到有效改善。其中，抑制界面极化是提高击穿场强从而增强储能性能的重要因素。具有最高构型熵的 (NaBiSrLaKBa)TiO (NBSLKBT) 样品显示出高达 9.8 J/cm 的超高能量存储效率 (= 86.5%)。这项工作表明，具有优越储能性能的熵策略在上述类型的高熵陶瓷上仍然有效，并开辟了一种通过熵增策略调制界面极化的新途径。