Avalanche photodiodes (APDs) have enabled highly sensitive photodetection in optical communication, sensing and quantum applications. Great efforts have been focused on improving their gain–bandwidth product (GBP). However, further advance has encountered enormous barriers due to incomplete consideration of the avalanche process. Here we implement a germanium/silicon APD with the GBP breaking through 1 THz. The performance is achieved by introducing two cooperative strategies: precisely shaping the electric field distribution and elaborately engineering the resonant effect in the avalanche process. Experimentally, the presented APD has a primary responsivity of 0.87 A W⁻¹ at unity gain, a large bandwidth of 53 GHz in the gain range of 9–19.5 and an ultrahigh GBP of 1,033 GHz under −8.6 V and at 1,550 nm. For demonstration, data reception of 112 Gb s⁻¹ on–off keying and 200 Gb s⁻¹ four-level pulse amplitude modulation signals per wavelength are achieved with clear eye diagrams and high sensitivity, as well as 800 G reception via four channels. This work provides a potential successor for high-speed optoelectronic devices in next-generation optical interconnects.

雪崩光电二极管 (APD) 在光通信、传感和量子应用中实现了高灵敏度光电检测。他们付出了巨大的努力来提高他们的增益带宽积（GBP）。然而，由于对雪崩过程的考虑不全面，进一步的进展遇到了巨大的障碍。在这里，我们实现了锗/硅 APD，GBP 突破了 1 THz。该性能是通过引入两种协作策略来实现的：精确塑造电场分布和精心设计雪崩过程中的谐振效应。实验上，所提出的 APD 在单位增益下具有 0.87 A W ^-1的主响应度，在 9-19.5 增益范围内具有 53 GHz 的大带宽，在 -8.6 V 和 1,550 nm 下具有 1,033 GHz 的超高 GBP。为了演示，每个波长的112 Gb s ^-1开关键控和200 Gb s ^-1四级脉冲幅度调制信号的数据接收具有清晰的眼图和高灵敏度，以及通过四个通道的800 G接收。这项工作为下一代光学互连中的高速光电器件提供了潜在的继任者。