Attaining highly uniform operations in a disordered system presents a persistent challenge. The utilization of ion migration in amorphous materials to trigger the resistive switching process of the material usually results in inferior uniformity of the memristive device. Here, we demonstrate that the resistive switching behavior can be activated through carrier doping in the disorder system, and highly ordered resistance modulation is achieved in Ag-doped albumen. By manipulating the doping level of the carrier, the localization of the free electron wavefunction can be tuned, leading to multi-level variations in resistance. This memristive switching behavior is in all electronic and displays excellent switching uniformity, holding great potential for applications in high-density memories and neuromorphic computing chips.

中文翻译：

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无序材料中载流子掺杂驱动的绝缘体-金属转变，用于具有高均匀性的忆阻开关

在无序的系统中实现高度统一的操作是一个持续的挑战。利用非晶材料中的离子迁移来触发材料的电阻切换过程通常会导致忆阻器件的均匀性较差。在这里，我们证明了电阻开关行为可以通过无序系统中的载流子掺杂来激活，并且在银掺杂蛋白中实现了高度有序的电阻调制。通过操纵载流子的掺杂水平，可以调整自由电子波函数的局域化，从而导致电阻的多级变化。这种忆阻开关行为存在于所有电子器件中，并表现出出色的开关均匀性，在高密度存储器和神经形态计算芯片中具有巨大的应用潜力。